SiC-MOSFETs

SiC-MOSFETs
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
Ergebnisse: 1'327
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Menge RoHS ECAD Model Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Qualifikation
Handelsname
Diodes Incorporated DMWSH170H850HM4
Diodes Incorporated SiC-MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 30Auf Lager
Min.: 1
Mult.: 1

ROHM Semiconductor SiC-MOSFETs TO247 1.2KV 55A N-CH SIC
Datenblatt
61Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement


Infineon Technologies SiC-MOSFETs SILICON CARBIDE MOSFET
Datenblatt
861Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1'000

SMD/SMT N-Channel 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC


Infineon Technologies SiC-MOSFETs SILICON CARBIDE MOSFET
Datenblatt
753Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1'000

SMD/SMT N-Channel 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
ROHM Semiconductor SiC-MOSFETs 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Datenblatt
529Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor SiC-MOSFETs TO247 650V 70A N-CH SIC
Datenblatt
215Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
IXYS IXFN27N120SK
IXYS SiC-MOSFETs SiCarbide-Discrete MOSFET SOT-227B(mini
Datenblatt
14Auf Lager
Min.: 1
Mult.: 1

SMD/SMT HiPerFET
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
Datenblatt
59Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch
Datenblatt
115Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
Datenblatt
105Auf Lager
Min.: 1
Mult.: 1

Thorugh Hole TO-247-4 N-Channel 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch
Datenblatt
120Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch
Datenblatt
117Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement

onsemi SiC-MOSFETs SIC MOS TO247-4L 1200V 160MOHM AUTO PART
Datenblatt
181Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
STMicroelectronics SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
Datenblatt
45Auf Lager
Weitere Infos Verfügbar
Min.: 1
Mult.: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 10 V, + 22 V 1.9 V 157 nC - 55 C + 200 C 390 W Enhancement
ROHM Semiconductor SiC-MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver
Datenblatt
87Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
Microchip Technology SiC-MOSFETs MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch
Datenblatt
25Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Central Semiconductor SiC-MOSFETs 1700V Through-Hole MOSFET N-Channel SiC
Datenblatt
30Auf Lager
30Auf Bestellung
Min.: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 37 A 20 V 2.6 V - 55 C + 175 C 28 W Depletion
Infineon Technologies SiC-MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datenblatt
125Auf Lager
240Auf Bestellung
Min.: 1
Mult.: 1
Max.: 20

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datenblatt
188Auf Lager
240Auf Bestellung
Min.: 1
Mult.: 1
Max.: 20

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datenblatt
141Auf Lager
240Auf Bestellung
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datenblatt
232Auf Lager
240Auf Bestellung
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 38 A 69 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datenblatt
164Auf Lager
240Auf Bestellung
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 28 A 103 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs SILICON CARBIDE MOSFET
Datenblatt
218Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datenblatt
194Auf Lager
Weitere Infos Verfügbar
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC
ROHM Semiconductor SiC-MOSFETs TO263 1.7KV N-CH 3.9A
Datenblatt
251Auf Lager
800Auf Bestellung
Min.: 1
Mult.: 1
: 800
SMD/SMT TO-263CA-7 N-Channel 1 Channel 1.7 kV 3.9 A 1.5 Ohms - 6 V to + 22 V 4 V 24 nC + 175 C 39 W Enhancement