SiC-MOSFETs

SiC-MOSFETs
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
Ergebnisse: 1'322
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Menge RoHS ECAD Model Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Qualifikation
Handelsname
IXYS SiC-MOSFETs SiC MOSFET in TOLL
Datenblatt
2'100Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2'000

SMD/SMT TTOLL-8 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC-MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
Datenblatt
550Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 99 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 454 W Enhancement
IXYS SiC-MOSFETs SiC MOSFET in TO247-4L
Datenblatt
550Auf Lager
Min.: 1
Mult.: 1
: 450

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC-MOSFETs SiC MOSFET in TO247-4L HV
Datenblatt
550Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC-MOSFETs SiC MOSFET in TO247-4L HV
Datenblatt
550Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC-MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L
Datenblatt
388Auf Lager
400Auf Bestellung
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 28 A 81 mOhms - 4 V, + 21 V 4.8 V 52 nC - 40 C + 150 C 75.3 W Enhancement
IXYS SiC-MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L
Datenblatt
478Auf Lager
400Auf Bestellung
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 45 A 47 mOhms - 4 V, + 21 V 4.8 V 79 nC - 40 C + 150 C 142 W Enhancement
IXYS SiC-MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L
Datenblatt
286Auf Lager
Weitere Infos Verfügbar
Min.: 1
Mult.: 1

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 46 A 47 mOhms 21 V 4.8 V 79 nC - 40 C + 150 C 143.7 W Enhancement
IXYS SiC-MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L
Datenblatt
472Auf Lager
400Auf Bestellung
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 85 A 22.5 mOhms - 4 V, + 21 V 4.8 V 154 nC - 40 C + 150 C 266 W Enhancement
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
450Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L
Datenblatt
397Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs TOLL 750V 80A SIC
Datenblatt
392Auf Lager
Min.: 1
Mult.: 1
: 2'000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datenblatt
439Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
450Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC - 40 C + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datenblatt
430Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
450Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
800Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1'000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datenblatt
700Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1'000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFETs TOLL 750V 37A SIC
Datenblatt
2'000Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2'000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor SiC-MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Datenblatt
450Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC-MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
442Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
427Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs TOLL 750V 26A SIC
Datenblatt
784Auf Lager
Min.: 1
Mult.: 1
: 2'000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor SiC-MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Datenblatt
447Auf Lager
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFETs 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET
Datenblatt
700Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 1'000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement AEC-Q101