|
|
MOSFETs N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
CHF 3.41
-
919Auf Lager
|
Mouser-Teilenr.
511-STB8NM60
|
STMicroelectronics
|
MOSFETs N-Ch 650 Volt 5 Amp
|
|
919Auf Lager
|
|
|
CHF 3.41
|
|
|
CHF 1.35
|
|
|
CHF 1.35
|
|
Min.: 1
Mult.: 1
:
1'000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
CHF 7.74
-
37Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT040TO65G3
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37Auf Lager
|
|
|
CHF 7.74
|
|
|
CHF 5.85
|
|
|
CHF 4.34
|
|
|
CHF 4.05
|
|
|
CHF 4.05
|
|
Min.: 1
Mult.: 1
:
1'800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
CHF 1.95
-
1'003Auf Lager
-
1'000Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N1K1K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1'003Auf Lager
1'000Auf Bestellung
|
|
|
CHF 1.95
|
|
|
CHF 0.951
|
|
|
CHF 0.851
|
|
|
CHF 0.684
|
|
|
CHF 0.627
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
CHF 2.60
-
1'043Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STF80N600K6
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1'043Auf Lager
|
|
|
CHF 2.60
|
|
|
CHF 1.30
|
|
|
CHF 1.28
|
|
|
CHF 1.07
|
|
|
CHF 0.94
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
CHF 3.59
-
540Auf Lager
-
600Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-STGHU30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540Auf Lager
600Auf Bestellung
|
|
|
CHF 3.59
|
|
|
CHF 2.38
|
|
|
CHF 1.69
|
|
|
CHF 1.45
|
|
Min.: 1
Mult.: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
CHF 3.39
-
766Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STGWA30M65DF2AG
Neues Produkt
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766Auf Lager
|
|
|
CHF 3.39
|
|
|
CHF 2.29
|
|
|
CHF 1.70
|
|
|
CHF 1.51
|
|
|
CHF 1.34
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
CHF 3.91
-
496Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STK615N4F8AG
Neues Produkt
|
STMicroelectronics
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496Auf Lager
|
|
|
CHF 3.91
|
|
|
CHF 2.60
|
|
|
CHF 1.85
|
|
|
CHF 1.74
|
|
|
CHF 1.65
|
|
|
CHF 1.62
|
|
Min.: 1
Mult.: 1
:
2'000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
CHF 1.71
-
910Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-STL160N6LF7
Neues Produkt
|
STMicroelectronics
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910Auf Lager
|
|
|
CHF 1.71
|
|
|
CHF 1.08
|
|
|
CHF 0.736
|
|
|
CHF 0.585
|
|
|
CHF 0.545
|
|
|
CHF 0.518
|
|
Min.: 1
Mult.: 1
:
3'000
|
|
MOSFETs
|
|
|
|
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
CHF 75.00
-
144Auf Lager
|
Mouser-Teilenr.
511-2N2222AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144Auf Lager
|
|
|
CHF 75.00
|
|
|
CHF 70.44
|
|
|
CHF 63.51
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
CHF 90.44
-
21Auf Lager
|
Mouser-Teilenr.
511-2N2907AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
CHF 189.76
-
27Auf Lager
|
Mouser-Teilenr.
511-2N5154S1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
CHF 5.40
-
557Auf Lager
|
Mouser-Teilenr.
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557Auf Lager
|
|
|
CHF 5.40
|
|
|
CHF 2.68
|
|
|
CHF 2.66
|
|
|
CHF 2.54
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
CHF 16.65
-
127Auf Lager
|
Mouser-Teilenr.
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
127Auf Lager
|
|
|
CHF 16.65
|
|
|
CHF 11.95
|
|
|
CHF 11.61
|
|
|
CHF 10.85
|
|
Min.: 1
Mult.: 1
:
1'000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
CHF 12.54
-
169Auf Lager
|
Mouser-Teilenr.
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169Auf Lager
|
|
|
CHF 12.54
|
|
|
CHF 8.85
|
|
|
CHF 8.53
|
|
|
CHF 8.07
|
|
|
CHF 7.54
|
|
Min.: 1
Mult.: 1
:
1'000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
CHF 12.65
-
527Auf Lager
|
Mouser-Teilenr.
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527Auf Lager
|
|
|
CHF 12.65
|
|
|
CHF 8.94
|
|
|
CHF 7.61
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
CHF 15.31
-
478Auf Lager
|
Mouser-Teilenr.
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
CHF 16.43
-
590Auf Lager
|
Mouser-Teilenr.
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590Auf Lager
|
|
|
CHF 16.43
|
|
|
CHF 10.48
|
|
|
CHF 9.50
|
|
|
CHF 9.01
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
CHF 14.64
-
462Auf Lager
|
Mouser-Teilenr.
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462Auf Lager
|
|
|
CHF 14.64
|
|
|
CHF 10.71
|
|
|
CHF 9.40
|
|
|
CHF 8.96
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
CHF 13.19
-
338Auf Lager
|
Mouser-Teilenr.
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
CHF 10.65
-
598Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
598Auf Lager
|
|
|
CHF 10.65
|
|
|
CHF 7.44
|
|
|
CHF 6.09
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
CHF 10.57
-
587Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587Auf Lager
|
|
|
CHF 10.57
|
|
|
CHF 7.39
|
|
|
CHF 6.04
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
CHF 8.57
-
537Auf Lager
-
600Auf Bestellung
|
Mouser-Teilenr.
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537Auf Lager
600Auf Bestellung
|
|
|
CHF 8.57
|
|
|
CHF 5.25
|
|
|
CHF 4.99
|
|
|
CHF 4.76
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
CHF 10.15
-
638Auf Lager
|
Mouser-Teilenr.
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638Auf Lager
|
|
|
CHF 10.15
|
|
|
CHF 7.41
|
|
|
CHF 6.02
|
|
|
CHF 6.01
|
|
|
CHF 5.73
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
CHF 10.24
-
303Auf Lager
|
Mouser-Teilenr.
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303Auf Lager
|
|
|
CHF 10.24
|
|
|
CHF 8.43
|
|
|
CHF 6.47
|
|
|
CHF 5.78
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
CHF 20.34
-
184Auf Lager
-
200Auf Bestellung
|
Mouser-Teilenr.
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
184Auf Lager
200Auf Bestellung
|
|
|
CHF 20.34
|
|
|
CHF 15.63
|
|
|
CHF 10.21
|
|
|
CHF 10.21
|
|
|
CHF 9.72
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|