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MOSFETs 20V 2.0A 3.1W 215mohm @ 4.5V
- SI4829DY-T1-E3
- Vishay / Siliconix
-
1:
CHF 0.951
-
Nicht auf Lager
|
Mouser-Teilenr.
781-SI4829DY-E3
|
Vishay / Siliconix
|
MOSFETs 20V 2.0A 3.1W 215mohm @ 4.5V
|
|
Nicht auf Lager
|
|
|
CHF 0.951
|
|
|
CHF 0.674
|
|
|
CHF 0.42
|
|
|
CHF 0.29
|
|
|
CHF 0.211
|
|
|
Anzeigen
|
|
|
CHF 0.25
|
|
|
CHF 0.187
|
|
|
CHF 0.173
|
|
|
CHF 0.156
|
|
Min.: 1
Mult.: 1
:
2'500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
|
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SiC-MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R020M1HXKSA1
- Infineon Technologies
-
1:
CHF 15.82
-
2'868Auf Lager
-
357Auf Bestellung
|
Mouser-Teilenr.
726-IMZA120R020M1HXK
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
|
|
2'868Auf Lager
357Auf Bestellung
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC-MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R020M1HXKSA1
- Infineon Technologies
-
1:
CHF 15.48
-
341Auf Lager
|
Mouser-Teilenr.
726-IMW120R020M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
|
|
341Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
|
|
|
IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
- IKW50N65ET7XKSA1
- Infineon Technologies
-
1:
CHF 4.05
-
567Auf Lager
|
Mouser-Teilenr.
726-IKW50N65ET7XKSA1
|
Infineon Technologies
|
IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
|
|
567Auf Lager
|
|
|
CHF 4.05
|
|
|
CHF 2.58
|
|
|
CHF 2.10
|
|
|
CHF 1.79
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
Bipolartransistoren - BJT SOT323 65V .1A PNP BJT
- BC857CW-QX
- Nexperia
-
1:
CHF 0.187
-
|
Mouser-Teilenr.
771-BC857CW-QX
|
Nexperia
|
Bipolartransistoren - BJT SOT323 65V .1A PNP BJT
|
|
|
|
|
CHF 0.187
|
|
|
CHF 0.087
|
|
|
CHF 0.055
|
|
|
CHF 0.038
|
|
|
CHF 0.032
|
|
|
CHF 0.022
|
|
Min.: 1
Mult.: 1
:
3'000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-323-3
|
|
|
|
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
- IKW75N65ET7XKSA1
- Infineon Technologies
-
1:
CHF 5.76
-
|
Mouser-Teilenr.
726-IKW75N65ET7XKSA1
|
Infineon Technologies
|
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
|
|
|
|
|
CHF 5.76
|
|
|
CHF 3.82
|
|
|
CHF 3.10
|
|
|
CHF 2.48
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBT-Module LOW POWER ECONO
Infineon Technologies IFS150B12N3E4PB50BPSA1
- IFS150B12N3E4PB50BPSA1
- Infineon Technologies
-
6:
CHF 143.25
-
Nicht-auf-Lager-Vorlaufzeit 13 Wochen
|
Mouser-Teilenr.
726-IFS150B12N3E4PB5
|
Infineon Technologies
|
IGBT-Module LOW POWER ECONO
|
|
Nicht-auf-Lager-Vorlaufzeit 13 Wochen
|
|
|
CHF 143.25
|
|
|
CHF 119.71
|
|
|
CHF 109.90
|
|
Min.: 6
Mult.: 6
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
Bipolartransistoren - BJT SOT323 65V .1A PNP BJT
- BC857CW-QF
- Nexperia
-
1:
CHF 0.243
-
Nicht-auf-Lager-Vorlaufzeit 53 Wochen
|
Mouser-Teilenr.
771-BC857CW-QF
|
Nexperia
|
Bipolartransistoren - BJT SOT323 65V .1A PNP BJT
|
|
Nicht-auf-Lager-Vorlaufzeit 53 Wochen
|
|
|
CHF 0.243
|
|
|
CHF 0.102
|
|
|
CHF 0.055
|
|
|
CHF 0.038
|
|
|
Anzeigen
|
|
|
CHF 0.017
|
|
|
CHF 0.032
|
|
|
CHF 0.027
|
|
|
CHF 0.023
|
|
|
CHF 0.017
|
|
Min.: 1
Mult.: 1
:
10'000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-323-3
|
|
Liechtenstein
